Multiscale Modelling of Creation and Evolution of Defects in SiC Diode Detectors Placed at a Neutron Field

Abstract

We discuss a multiscale computer simulation method to study the long-time accumulation of defects for SiC detectors placed in the central reflector of the Gas Turbine-Modular Helium Reactor (GT-MHR) at 500 K. Using Monte Carlo (MC), binary collision approximation (BCA) and kinetic lattice Monte Carlo (KLMC) simulations, we calculate the number of point defects per atom (PDPA) for SiC detectors over a 15.7 month reactor refuelling cycle, which is the minimum time when it would be possible to replace the SiC detectors, if that were necessary. We found, for SiC detectors placed at the centre of the GT-MHR's central reflector, the PDPA is 1.7x10-3 in the depleted region for SiC detectors operated at 500 K for a reactor refuelling cycle, and that approximately half of the defects that are initially created anneal out during that period.